FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance

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Shenzhen Koben Electronics Co., Ltd.

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Name: FLM091025F X Band High Power RF Transistor FET 937W High Performance
Brand: Fuji Electric
Price: 1 USD

Brand Name : Fuji Electric

Model Number : FLM0910-25F

Certification : IEC

Place of Origin : JP

MOQ : 1 piece

Price : negotiable

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000 pieces per year

Delivery Time : 1-2 working days

Packaging Details : factory standard packing

Drain-Source Voltage : 15V

Gate-Source Voltage : -5V

Total Power Dissipation : 93.7W

Storage Temperature : -65 to +175℃

Channel Temperature : 175℃

Max Drain Current : 16.2A

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FLM0910-25F RF Power Transistor X-Band Internally Matched FET

DESCRIPTION

The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem

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FLM0910-25F X- Band High Power RF Transistor FET 93.7W High Performance

Product Tags:

high power mosfet transistors

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